e100: e100_phy_init() isolates selected PHY, causes 10 second boot delay
[linux-2.6/linux-acpi-2.6/ibm-acpi-2.6.git] / drivers / mtd / nand / nand_ids.c
blob69ee2c90eb0b3499e30c9ce00bdf787c2fb9dd53
1 /*
2 * drivers/mtd/nandids.c
4 * Copyright (C) 2002 Thomas Gleixner (tglx@linutronix.de)
6 * This program is free software; you can redistribute it and/or modify
7 * it under the terms of the GNU General Public License version 2 as
8 * published by the Free Software Foundation.
11 #include <linux/module.h>
12 #include <linux/mtd/nand.h>
14 * Chip ID list
16 * Name. ID code, pagesize, chipsize in MegaByte, eraseblock size,
17 * options
19 * Pagesize; 0, 256, 512
20 * 0 get this information from the extended chip ID
21 + 256 256 Byte page size
22 * 512 512 Byte page size
24 struct nand_flash_dev nand_flash_ids[] = {
26 #ifdef CONFIG_MTD_NAND_MUSEUM_IDS
27 {"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0},
28 {"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0},
29 {"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0},
30 {"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0},
31 {"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0},
32 {"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0},
33 {"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0},
34 {"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0},
35 {"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0},
36 {"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0},
38 {"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0},
39 {"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0},
40 {"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
41 {"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
42 #endif
44 {"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0},
45 {"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0},
46 {"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
47 {"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
49 {"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
50 {"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
51 {"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
52 {"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
54 {"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
55 {"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
56 {"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
57 {"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
59 {"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
60 {"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0},
61 {"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
62 {"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
63 {"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16},
64 {"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
65 {"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16},
67 {"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
70 * These are the new chips with large page size. The pagesize and the
71 * erasesize is determined from the extended id bytes
73 #define LP_OPTIONS (NAND_SAMSUNG_LP_OPTIONS | NAND_NO_READRDY | NAND_NO_AUTOINCR)
74 #define LP_OPTIONS16 (LP_OPTIONS | NAND_BUSWIDTH_16)
76 /*512 Megabit */
77 {"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, LP_OPTIONS},
78 {"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, LP_OPTIONS},
79 {"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, LP_OPTIONS16},
80 {"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, LP_OPTIONS16},
82 /* 1 Gigabit */
83 {"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, LP_OPTIONS},
84 {"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, LP_OPTIONS},
85 {"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, LP_OPTIONS16},
86 {"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, LP_OPTIONS16},
88 /* 2 Gigabit */
89 {"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, LP_OPTIONS},
90 {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, LP_OPTIONS},
91 {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, LP_OPTIONS16},
92 {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, LP_OPTIONS16},
94 /* 4 Gigabit */
95 {"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, LP_OPTIONS},
96 {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, LP_OPTIONS},
97 {"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, LP_OPTIONS16},
98 {"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, LP_OPTIONS16},
100 /* 8 Gigabit */
101 {"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, LP_OPTIONS},
102 {"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, LP_OPTIONS},
103 {"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, LP_OPTIONS16},
104 {"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, LP_OPTIONS16},
106 /* 16 Gigabit */
107 {"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, LP_OPTIONS},
108 {"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, LP_OPTIONS},
109 {"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, LP_OPTIONS16},
110 {"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, LP_OPTIONS16},
113 * Renesas AND 1 Gigabit. Those chips do not support extended id and
114 * have a strange page/block layout ! The chosen minimum erasesize is
115 * 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page
116 * planes 1 block = 2 pages, but due to plane arrangement the blocks
117 * 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 Anyway JFFS2 would
118 * increase the eraseblock size so we chose a combined one which can be
119 * erased in one go There are more speed improvements for reads and
120 * writes possible, but not implemented now
122 {"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000,
123 NAND_IS_AND | NAND_NO_AUTOINCR |NAND_NO_READRDY | NAND_4PAGE_ARRAY |
124 BBT_AUTO_REFRESH
127 {NULL,}
131 * Manufacturer ID list
133 struct nand_manufacturers nand_manuf_ids[] = {
134 {NAND_MFR_TOSHIBA, "Toshiba"},
135 {NAND_MFR_SAMSUNG, "Samsung"},
136 {NAND_MFR_FUJITSU, "Fujitsu"},
137 {NAND_MFR_NATIONAL, "National"},
138 {NAND_MFR_RENESAS, "Renesas"},
139 {NAND_MFR_STMICRO, "ST Micro"},
140 {NAND_MFR_HYNIX, "Hynix"},
141 {NAND_MFR_MICRON, "Micron"},
142 {NAND_MFR_AMD, "AMD"},
143 {0x0, "Unknown"}
146 EXPORT_SYMBOL(nand_manuf_ids);
147 EXPORT_SYMBOL(nand_flash_ids);
149 MODULE_LICENSE("GPL");
150 MODULE_AUTHOR("Thomas Gleixner <tglx@linutronix.de>");
151 MODULE_DESCRIPTION("Nand device & manufacturer IDs");