1 #==============================================================================
2 # GSS mix-type simulation file for 1.5 Micron P-Channel MOSFET
3 #==============================================================================
10 #------------------------------------------------------------------------------
11 # voltage sources are needed here.
12 vsource Type = VDC ID = GND Tdelay=0 Vconst=0
13 vsource Type = VDC ID = VCC Tdelay=0 Vconst=5
14 vsource Type = VDC ID = VGATE Tdelay=0 Vconst=5
16 #------------------------------------------------------------------------------
17 # specify boundary condition.
18 boundary Type = InsulatorInterface ID=IF_POxide_to_PSilicon QF=0
19 boundary Type = GateContact ID=PGate WorkFunction=5.25
20 boundary Type = OhmicContact ID=PSubstrate Res=0 Cap=0 Ind=0
21 CONTACT Type = OhmicContact ID=PSource Res=0 Cap=0 Ind=0
22 CONTACT Type = OhmicContact ID=PDrain Res=0 Cap=0 Ind=0
24 #------------------------------------------------------------------------------
25 # specify physical model, use Lucent mobility here.
26 PMIS region=Si mobility=Lucent
28 #------------------------------------------------------------------------------
30 IMPORT CoreFile=pmos_init.cgns
31 METHOD Type = DDML1MIX Scheme = Newton NS=Basic LS=GMRES ServerPort=17002