1 #==============================================================================
2 # GSS mix-type simulation file for 1.5 Micron N-Channel MOSFET
3 #==============================================================================
10 #------------------------------------------------------------------------------
11 # voltage sources are needed here.
12 vsource Type = VDC ID = GND Tdelay=0 Vconst=0
13 vsource Type = VDC ID = VCC Tdelay=0 Vconst=5
14 vsource Type = VDC ID = VGATE Tdelay=0 Vconst=5
16 #------------------------------------------------------------------------------
17 # specify boundary condition.
18 boundary Type = InsulatorInterface ID=IF_NOxide_to_NSilicon QF=0
19 boundary Type = GateContact ID=NGate WorkFunction=4.17
20 boundary Type = OhmicContact ID=NSubstrate Res=0 Cap=0 Ind=0
21 CONTACT Type = OhmicContact ID=NSource Res=0 Cap=0 Ind=0
22 CONTACT Type = OhmicContact ID=NDrain Res=0 Cap=0 Ind=0
24 #------------------------------------------------------------------------------
25 # specify physical model, use Lucent mobility here.
26 PMIS region=Si mobility=Lucent
28 #------------------------------------------------------------------------------
30 IMPORT CoreFile=nmos_init.cgns
31 METHOD Type = DDML1MIX Scheme = Newton NS=Basic LS=GMRES ServerPort=17001